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Product Data Sheet
2 - 6 GHz Gain Block Amplifier
TGA8226-SCC
Key Features and Performance
* * * * * * 2 to 6 GHz Frequency Range 13.5 dB Gain 17 dBm Output Power at 1 dB Gain Compression 5.5 dB Noise Figure Operates from Single 15V Supply 1.47 x 1.85 x 0.15 mm (0.058 x 0.073 x 0.006 in.)
Description
The TriQuint TGA8226-SCC is a self biased distributed amplifier and operates from a single 15 V supply. Four 457 um FETs produce a typical gain greater than 13.5 dB, with input and output SWRs less than 2:1. Direct cascading without additional components is possible by using the on-chip blocking capacitors. Ground is provided to the circuitry through vias to the backside metallization. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as thermocompression and thermosonic wirebonding processes. The TGA8226-SCC is available in chip form and is readily assembled using automated equipment.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet TGA8226-SCC
TYPICAL SMALL-SIGNAL POWER GAIN
TYPICAL NOISE FIGURE
TYPICAL OUTPUT POWER P1dB
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet TGA8226-SCC
TYPICAL INPUT RETURN LOSS
TYPICAL OUTPUT RETURN LOSS
ABSOLUTE MAXIMUM RATINGS
Positive supply voltage, V+....................................................................................... 18 V Pow er dissipation, PD at (or below ) 25oC base-plate temperature *.................................... 4.4 W Input continuous-w ave pow er, PIN.............................................................................. 23 dB Operating Channel temperature, TCH **........................................................................... oC 150 Mounting temperature (30 sec.), TM..............................................................................320oC Storage temperature range, TSTG.................................................................................-65 to 150oC Ratings over operating channel temperature range, TCH (unless otherw ise noted). Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "RF Characteristics" is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. * For operation above 25oC base-plate temperature, derate linearly at the rate of 9.2 mW/oC. ** Operating channel temperature (TCH) directly affects the device MTTF. For maximum life, it is recommended that channel temperature be maintained at the low est possible level.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet TGA8226-SCC
TYPICAL S-PARAMETERS Fre que nc y
(GHz) M AG
S 11 ANG() MAG
S 21 ANG() M AG
S 12 ANG() M AG
S 22 ANG()
GAIN (dB )
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0
0.15 0.15 0.14 0.14 0.13 0.13 0.14 0.16 0.18 0.19 0.19 0.20 0.20 0.19 0.13 0.16 0.50 0.69 0.69 0.65
7 -20 -44 -73 -104 -133 -155 -174 169 157 148 140 130 111 73 -38 -117 -168 162 144
2.70 3.47 4.01 4.49 4.89 5.14 5.15 5.10 5.07 5.06 5.08 5.13 5.27 5.49 5.97 6.73 7.01 5.07 3.37 2.38
21 -6 -27 -49 -72 -95 -118 -139 -160 180 160 140 119 98 75 46 3 -38 -65 -86
0.000 0.001 0.001 0.002 0.004 0.006 0.009 0.008 0.007 0.008 0.008 0.008 0.008 0.008 0.011 0.017 0.023 0.022 0.018 0.015
30 104 124 124 119 110 88 64 57 50 37 21 -5 -33 -68 -106 -154 165 141 128
0.21 0.20 0.21 0.20 0.20 0.20 0.20 0.19 0.17 0.16 0.14 0.12 0.10 0.08 0.09 0.11 0.13 0.10 0.07 0.05
153 125 100 80 62 48 34 22 12 0 -12 -21 -24 -14 -10 -24 -73 -128 -160 176
8.6 10.8 12.1 13.1 13.8 14.2 14.2 14.2 14.1 14.1 14.1 14.2 14.4 14.8 15.5 16.6 16.9 14.1 10.6 7.5
V+ = 15 V, TA = 25oC, DC-coupled bias and external DC blocks Reference planes for S-parameter data include bond wires as specified in the "Recommended Assembly Diagram". The S-parameters are also available on floppy disk and the world wide web.
RF CHARACTERISTICS
P AR AM ETER
TES T C ONDITIONS
TYP
UNIT
Small-s ignal pow e r gain SWR(in) Input s tanding w a ve ra tio SWR(out) Output s ta nding w a ve ratio P 1dB Output pow e r at 1-dB ga in c ompre s s ion NF Nois e figure IP 3 Output third-order interc ept point
Gp
f=2 f=2 f=2 f=2 f=2 f=2 f=4 f=6
to 6 GHz 13.5 dB to 6 GHz 1.4:1 to 6 GHz 1.4:1 to 6 GHz 17 dBm to 6 GHz 5.5 dB GHz 26 GHz 28 dBm GHz 27
V+ = 15 V, TA = 25oC, DC-coupled bias and external DC blocks
DC CHARACTERISTICS
P AR AM ETER
TES T CONDITIONS
TYP
UNIT
I+
Pos itive s upply c urre nt
TA = 25oC
V + = 15 V TA = 25C
68
mA
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
4
Product Data Sheet TGA8226-SCC
EQUIVALENT SCHEMATIC
TYPICAL BIAS NETWORK
(DC-Blocked Bias Circuit)
(DC-Coupled Bias Circuit)
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
5
Product Data Sheet TGA8226-SCC
RECOMMENDED ASSEMBLY DIAGRAM DC-Blocked Bias Circuit
RF connections: Bond using 1-mil diameter, 15-mil-length gold bond wires at both RF Input and RF Output for optimum RF performance. Close placement of external components is essential to stability. Refer to TriQuint's Recommended Assembly Instructions for GaAs Products.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
6
Product Data Sheet TGA8226-SCC
RECOMMENDED ASSEMBLY DIAGRAM DC-Coupled Circuit
RF connections: Bond using 1-mil diameter, 15-mil-length gold bond wires at both RF Input and RF Output for optimum RF performance. Close placement of external components is essential to stability. Refer to TriQuint's Recommended Assembly Instructions for GaAs Products.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
7
Product Data Sheet TGA8226-SCC
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
8

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